The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
May. 20, 2013
Panasonic Corporation, Osaka, JP;
Tsutomu Kiyosawa, Hyogo, JP;
Masao Uchida, Osaka, JP;
Nobuyuki Horikawa, Kyoto, JP;
Koutarou Tanaka, Osaka, JP;
Kazuhiro Kagawa, Hyogo, JP;
Yasuyuki Yanase, Gifu, JP;
Takashi Hasegawa, Hyogo, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor layerhaving a drift region, a body region, and a source regionprovided at a position next to the body region; an epitaxial layerin contact with the body region; and a gate insulating filmprovided on the epitaxial layer are formed on a principal surface of a semiconductor substrate. The epitaxial layer includes an interface epitaxial layerin contact with the body region, a first epitaxial layeron the interface epitaxial layer, and a second epitaxial layeron the first epitaxial layer. An impurity concentration of the interface epitaxial layer is higher than an impurity concentration of the first epitaxial layer, and lower than an impurity concentration of the second epitaxial layer.