The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2014

Filed:

Jan. 07, 2013
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventor:

Yukimune Watanabe, Hokuto, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 21/02 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02378 (2013.01); H01L 21/02639 (2013.01); H01L 21/02447 (2013.01); H01L 29/1608 (2013.01); H01L 21/02529 (2013.01); H01L 21/02381 (2013.01); H01L 21/0262 (2013.01); H01L 21/02002 (2013.01); H01L 21/0265 (2013.01); H01L 21/02656 (2013.01); H01L 21/02647 (2013.01); H01L 29/165 (2013.01);
Abstract

A semiconductor substrate includes: a silicon substrate; a monocrystalline silicon carbide film formed on a surface of the silicon substrate; and a stress relieving film formed on the surface of the silicon substrate opposite from the side on which the monocrystalline silicon carbide film is formed, and that relieves stress in the silicon substrate by applying compressional stress to the silicon substrate surface on which the stress relieving film is formed, wherein a plurality of spaces is present in the monocrystalline silicon carbide film in portions on the side of the silicon substrate and along the interface between the monocrystalline silicon carbide film and the silicon substrate.


Find Patent Forward Citations

Loading…