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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8847228 B1

PDFFull Text
Date of Patent:
Sep. 30, 2014

Filed:

Nov. 30, 2012

Thin film transistor array panel

Applicant:

Samsung Display Co., Ltd., Yongin, KR;

Inventors:

Kyung Seop Kim, Hwaseong-si, KR;

Byeong-Beom Kim, Asan-si, KR;

Joon Yong Park, Gunpo-si, KR;

Chang Oh Jeong, Suwon-si, KR;

Hong Long Ning, Suwon-si, KR;

Dong Min Lee, Anyang-si, KR;

Assignee:

Samsung Display Co., Ltd., , KR;

Attorney:

Innovation Counsel LLP

Primary Examiner:

Hoai V Pham

Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 31/036 (2006.01); H01L 31/0376 (2006.01); H01L 31/20 (2006.01); H01L 29/49 (2006.01); H01L 29/45 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78693 (2013.01); H01L 29/4908 (2013.01); H01L 29/458 (2013.01); H01L 29/7869 (2013.01);
Abstract

A thin film transistor array panel includes: a semiconductor layer disposed on an insulation substrate; a gate electrode overlapping the semiconductor layer; a source electrode and a drain electrode overlapping the semiconductor layer; a first barrier layer disposed between the source electrode and the semiconductor layer; and a second barrier layer disposed between the drain electrode and the semiconductor layer, wherein the first barrier layer and the second barrier layer include nickel-chromium (NiCr).

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