The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Sep. 27, 2011
Wei Xia, Irvine, CA (US);
Xiangdong Chen, Irvine, CA (US);
Wei Xia, Irvine, CA (US);
Xiangdong Chen, Irvine, CA (US);
Broadcom Corporation, Irvine, CA (US);
Abstract
According to one exemplary embodiment, a fin-based bipolar junction transistor (BJT) includes a wide collector situated in a semiconductor substrate. A fin base is disposed over the wide collector. Further, a fin emitter and an epi emitter are disposed over the fin base. A narrow base-emitter junction of the fin-based BJT is formed by the fin base and the fin emitter and the epi emitter provides increased current conduction and reduced resistance for the fin-based BJT. The epi emitter can be epitaxially formed on the fin emitter and can comprise polysilicon. Furthermore, the fin base and the fin emitter can each comprise single crystal silicon.