The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2014

Filed:

Oct. 11, 2007
Applicant:

Kayoko Shibata, Tokyo, JP;

Inventor:

Kayoko Shibata, Tokyo, JP;

Assignee:

PS4 Luxco S.A.R.L., Luxembourg, LU;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); G01R 31/3185 (2006.01); G11C 29/02 (2006.01); H01L 21/66 (2006.01); H01L 23/48 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G01R 31/318513 (2013.01); H01L 23/481 (2013.01); H01L 2924/3011 (2013.01); G11C 29/02 (2013.01); G11C 29/022 (2013.01); G11C 29/025 (2013.01); H01L 22/32 (2013.01); G11C 2029/5006 (2013.01); H01L 2224/16145 (2013.01);
Abstract

A stacked semiconductor device includes: an internal circuit; a through electrode provided to penetrate through a semiconductor substrate; a test wiring to which a predetermined potential different from a substrate potential is supplied at a time of a test; a first switch arranged between the through electrode and the internal circuit; a second switch arranged between the through electrode and the test wiring; and a control circuit that exclusively turns on the first and the second switches. Thereby, it becomes possible to perform an insulation test in a state that the through electrode and the internal circuit are cut off. Thus, even when a slight short-circuit that does not lead to a current defect occurs, the short circuit can be detected.


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