The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2014

Filed:

Aug. 20, 2012
Applicants:

Kookheon Char, Seoul, KR;

Seong Hoon Lee, Seoul, KR;

Wan Ki Bae, Busan, KR;

Hyuck Hur, Chungcheongnam-do, KR;

Inventors:

Kookheon Char, Seoul, KR;

Seong Hoon Lee, Seoul, KR;

Wan Ki Bae, Busan, KR;

Hyuck Hur, Chungcheongnam-do, KR;

Assignee:

SNU R&DB Foundation, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/00 (2006.01); B82Y 10/00 (2011.01); C01B 19/00 (2006.01); B82Y 30/00 (2011.01); H01L 29/22 (2006.01); C09K 11/88 (2006.01); C01G 9/08 (2006.01); C09K 11/02 (2006.01); C09K 11/56 (2006.01); C01G 11/00 (2006.01); H01L 29/12 (2006.01); C01G 11/02 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/127 (2013.01); B82Y 10/00 (2013.01); C01P 2004/03 (2013.01); H01L 21/0256 (2013.01); H01L 21/02601 (2013.01); C01B 19/002 (2013.01); C01B 19/007 (2013.01); B82Y 30/00 (2013.01); H01L 29/22 (2013.01); C09K 11/883 (2013.01); C01P 2004/04 (2013.01); C01G 9/08 (2013.01); C01P 2006/40 (2013.01); H01L 21/0248 (2013.01); C09K 11/02 (2013.01); C09K 11/565 (2013.01); H01L 21/02562 (2013.01); C01G 11/00 (2013.01); C01G 11/02 (2013.01); C01P 2004/84 (2013.01); H01L 21/02477 (2013.01); H01L 21/02557 (2013.01); H01L 21/02474 (2013.01); Y10S 438/962 (2013.01); Y10S 977/774 (2013.01);
Abstract

Provided are quantum dots having a gradual composition gradient shell structure which have an improved luminous efficiency and optical stability, and a method of manufacturing the quantum dots in a short amount of time at low cost. In the method, the quantum dots can be manufactured in a short amount of time at low cost using a reactivity difference between semiconductor precursors, unlike in uneconomical and inefficient conventional methods where shells are formed after forming cores and performing cleaning and redispersion processes. Also, formation of the cores is followed by formation of shells having a composition gradient.


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