The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Apr. 22, 2011
Sho Kato, Kanagawa, JP;
Kazutaka Kuriki, Kanagawa, JP;
Sho Kato, Kanagawa, JP;
Kazutaka Kuriki, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
To provide a method of obtaining a single crystal semiconductor film by a method that is simple and low-cost. A single crystal semiconductor filmhaving compression stress is formed over a surface of a single crystal semiconductor substrateby a vapor phase epitaxial growth method, a film having tensile stress (for example, a thermo-setting resin film) is formed over a surface of the single crystal semiconductor film, and the single crystal semiconductor substrateand the single crystal semiconductor filmare separated from each other by a separation step in which force is applied to the single crystal semiconductor film, thereby obtaining a single crystal semiconductor film. Note that as the thermo-setting resin film, an epoxy resin film can be used, for example.