The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Mar. 13, 2012
Charles W. Koburger, Iii, Albany, NY (US);
Peter Zeitzoff, Albany, NY (US);
Mariko Takayanagi, Albany, NY (US);
Charles W. Koburger, III, Albany, NY (US);
Peter Zeitzoff, Albany, NY (US);
Mariko Takayanagi, Albany, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Kabushiki Kaisha Toshiba, , JP;
Freescale Semiconductors Inc., Austin, TX (US);
Abstract
A method of forming a semiconductor device includes defining a first type region and a second type region in a substrate, t separated by one or more inter-well STI structures; etching and filling, in at least one of the first type region and the second type region, one or more intra-well STI structures for isolating semiconductor devices formed within a same polarity well, wherein the one or more inter-well STI structures are formed at a substantially same depth with respect to the one or more intra-well STI structures; implanting, a main well region, wherein a bottom of the main well region is disposed above a bottom of the one or more inter-well and intra-well STI features; and implanting, one or more deep well regions that couple main well regions, wherein the one or more deep well regions are spaced away from the one or more inter-well STI structures.