The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Dec. 20, 2013
International Business Machines Corporation, Armonk, NY (US);
Marc W. Cantell, Sheldon, VT (US);
Thai Doan, Burlington, VT (US);
Jessica A. Levy, Milton, VT (US);
Qizhi Liu, Lexington, MA (US);
William J. Murphy, North Ferrisburgh, VT (US);
Christa R. Willets, Jericho, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Disclosed is a transistor structure, having a completely silicided extrinsic base for reduced base resistance R. Specifically, a metal silicide layer covers the extrinsic base, including the portion of the extrinsic base that extends below the upper portion of a T-shaped emitter. One exemplary technique for ensuring that the metal silicide layer covers this portion of the extrinsic base requires tapering the upper portion of the emitter. Such tapering allows a sacrificial layer below the upper portion of the emitter to be completely removed during processing, thereby exposing the extrinsic base below and allowing the metal layer required for silicidation to be deposited thereon. This metal layer can be deposited, for example, using a high pressure sputtering technique to ensure that all exposed surfaces of the extrinsic base, even those below the upper portion of the emitter, are covered.