The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2014
Filed:
Jul. 31, 2013
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Allan He, Shanghai, CN;
Abstract
A method for fabricating a semiconductor device comprises providing a substrate having a core oxide layer and an I/O oxide layer formed thereon. The I/O oxide layer has an I/O mask layer formed thereon. The method also includes forming an I/O dummy gate on the I/O mask layer and a core dummy gate on the core oxide layer, forming an etch barrier layer on the substrate covering the dummy gates, forming a dielectric layer on the etch barrier layer, and planarizing the etch barrier layer and the dielectric layer to expose the top surface of the dummy gates. The method further includes simultaneously removing the I/O and core dummy gates to form I/O and core gate grooves, removing the core oxide layer, removing the I/O mask layer, depositing a dielectric layer in the core gate groove, and forming a metal gate layer filling the I/O and core gate grooves.