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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8846437 B1

PDFFull Text
Date of Patent:
Sep. 30, 2014

Filed:

Sep. 30, 2011

High efficiency thin film transistor device with gallium arsenide layer

Applicants:

Kaushal K. Singh, Santa Clara, CA (US);

Robert Jan Visser, Menlo Park, CA (US);

Srikant Rao, Powai Mumba, IN;

Bhaskar Kumar, Santa Clara, CA (US);

Claire J. Carmalt, Rickmansworth Hertfordshire, GB;

Ranga Rao Arnepalli, Veeravalli Andhrapradesh, IN;

Omkaram Nalamasu, San Jose, CA (US);

Gaurav Saraf, Santa Clara, CA (US);

Sanjayan Sathasivam, Finchley, GB;

Christopher Stuart Blackman, Marlow, GB;

Inventors:

Kaushal K. Singh, Santa Clara, CA (US);

Robert Jan Visser, Menlo Park, CA (US);

Srikant Rao, Powai Mumba, IN;

Bhaskar Kumar, Santa Clara, CA (US);

Claire J. Carmalt, Rickmansworth Hertfordshire, GB;

Ranga Rao Arnepalli, Veeravalli Andhrapradesh, IN;

Omkaram Nalamasu, San Jose, CA (US);

Gaurav Saraf, Santa Clara, CA (US);

Sanjayan Sathasivam, Finchley, GB;

Christopher Stuart Blackman, Marlow, GB;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:

Patterson & Sheridan, LLP

Primary Examiner:

Kimberly Rizkallah

Assistant Examiner:

Maria Ligai

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); B82Y 30/00 (2011.01); H01L 31/18 (2006.01); H01L 31/072 (2012.01); H01L 31/0352 (2006.01); H01L 51/42 (2006.01); C23C 16/56 (2006.01); H01L 31/075 (2012.01); H01L 31/0224 (2006.01); C23C 16/30 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
B82Y 30/00 (2013.01); H01L 21/02576 (2013.01); H01L 21/02601 (2013.01); H01L 31/184 (2013.01); H01L 31/072 (2013.01); H01L 21/02546 (2013.01); H01L 21/02628 (2013.01); Y02E 10/549 (2013.01); H01L 31/035227 (2013.01); H01L 21/02579 (2013.01); H01L 31/1864 (2013.01); H01L 51/424 (2013.01); C23C 16/56 (2013.01); H01L 21/0262 (2013.01); H01L 21/0237 (2013.01); H01L 21/02491 (2013.01); Y02E 10/544 (2013.01); H01L 31/075 (2013.01); H01L 51/0048 (2013.01); H01L 31/022425 (2013.01); Y02E 10/548 (2013.01); C23C 16/301 (2013.01);
Abstract

Embodiments of the invention provide a method of forming a doped gallium arsenide based (GaAs) layer from a solution based precursor. The doped gallium arsenide based (GaAs) layer formed from the solution based precursor may assist solar cell devices to improve light absorption and conversion efficiency. In one embodiment, a method of forming a solar cell device includes forming a first layer with a first type of dopants doped therein over a surface of a substrate, forming a GaAs based layer on the first layer, and forming a second layer with a second type of dopants doped therein on the GaAs based layer.

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