The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2014

Filed:

Feb. 04, 2011
Applicants:

Toshio Sakurai, Tokyo, JP;

Hisashi Kobuke, Tokyo, JP;

Tomohiro Arashi, Tokyo, JP;

Kiyoshi Hatanaka, Tokyo, JP;

Yasuharu Miyauchi, Tokyo, JP;

Inventors:

Toshio Sakurai, Tokyo, JP;

Hisashi Kobuke, Tokyo, JP;

Tomohiro Arashi, Tokyo, JP;

Kiyoshi Hatanaka, Tokyo, JP;

Yasuharu Miyauchi, Tokyo, JP;

Assignee:

TDK Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 18/00 (2006.01); B32B 38/00 (2006.01); B32B 37/06 (2006.01); C04B 35/626 (2006.01); C04B 35/462 (2006.01); C04B 35/20 (2006.01); H01G 4/12 (2006.01); H01G 4/20 (2006.01); H01G 4/30 (2006.01);
U.S. Cl.
CPC ...
H01G 4/1227 (2013.01); C04B 35/6263 (2013.01); C04B 2235/36 (2013.01); C04B 2237/341 (2013.01); C04B 2235/3262 (2013.01); C04B 2237/60 (2013.01); B32B 18/00 (2013.01); C04B 2235/6025 (2013.01); C04B 2235/3281 (2013.01); C04B 2235/3234 (2013.01); C04B 2235/3409 (2013.01); C04B 35/462 (2013.01); C04B 2235/407 (2013.01); C04B 35/62685 (2013.01); C04B 2235/3445 (2013.01); C04B 2235/3208 (2013.01); C04B 2237/346 (2013.01); C04B 2235/3275 (2013.01); C04B 2235/408 (2013.01); C04B 35/20 (2013.01); C04B 2235/3298 (2013.01); C04B 35/62675 (2013.01); H01G 4/20 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3224 (2013.01); C04B 2237/58 (2013.01); C04B 2235/3215 (2013.01); H01G 4/30 (2013.01);
Abstract

A ceramic electronic component includes a first dielectric layer, a second dielectric layer, and a boundary reaction layer. The first dielectric layer is a layer containing BaO, NdO, and TiO, the second dielectric layer is a layer containing a material different from the material of the first dielectric layer, and the boundary reaction layer is a layer formed between the first dielectric layer and the second dielectric layer and containing at least one of Zn, Ti, Cu, and Mg.


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