The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2014

Filed:

Dec. 09, 2008
Applicants:

Shinji Hara, Tokyo, JP;

Yoshihiro Tsuchiya, Tokyo, JP;

Tsutomu Chou, Tokyo, JP;

Tomihito Mizuno, Tokyo, JP;

Inventors:

Shinji Hara, Tokyo, JP;

Yoshihiro Tsuchiya, Tokyo, JP;

Tsutomu Chou, Tokyo, JP;

Tomihito Mizuno, Tokyo, JP;

Assignee:

TDK Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); C23C 14/00 (2006.01); G01R 33/09 (2006.01); B82Y 25/00 (2011.01); G11B 5/39 (2006.01);
U.S. Cl.
CPC ...
G11B 5/3912 (2013.01); C23C 14/0036 (2013.01); G01R 33/093 (2013.01); B82Y 25/00 (2013.01); C23C 14/3464 (2013.01);
Abstract

A method of manufacturing a magnetoresistive (MR) effective element having a pair of magnetic layers and a nonmagnetic intermediate layer including a ZnO film, wherein a relative angle of magnetization directions of the pair of magnetic layers varies according to an external magnetic field. The method includes a step for introducing a mix gas of oxygen gas and argon gas into a depressurized chamber, wherein a first target of ZnO, a second target of Zn and a substrate having a right-below layer are disposed in the chamber, and a step for depositing the ZnO film on the right-below layer by applying each of a first and second direct current (DC) application power to spaces between the first and second targets and the substrate respectively after the mix gas introducing step, wherein the first and second targets are set at negative potential, and the substrate is set at positive potential.


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