The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 30, 2014

Filed:

Jul. 09, 2007
Applicants:

Reinard Rogy, Graz, AT;

Christian Zenz, Graz, AT;

Inventors:

Reinard Rogy, Graz, AT;

Christian Zenz, Graz, AT;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06K 19/06 (2006.01); G06K 19/077 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
G06K 19/07749 (2013.01); G06K 19/07775 (2013.01); H01L 24/80 (2013.01); G06K 19/07779 (2013.01); H01L 24/82 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/30105 (2013.01); H01L 2224/0231 (2013.01); H01L 2924/19041 (2013.01); H01L 24/11 (2013.01); H01L 2924/014 (2013.01); H01L 2224/92144 (2013.01); H01L 2224/81205 (2013.01); H01L 2224/02333 (2013.01); H01L 2924/01013 (2013.01); H01L 24/81 (2013.01); G06K 19/0775 (2013.01); H01L 2224/83801 (2013.01); H01L 2224/81801 (2013.01); H01L 2924/14 (2013.01); H01L 2224/13099 (2013.01); H01L 2924/01033 (2013.01); H01L 24/83 (2013.01); H01L 2224/13144 (2013.01);
Abstract

In a method of producing an integrated circuit () for a transponder () a photoresist layer () is applied on a first surface () of a semiconductor device (). A patterned mask () is generated by lithographically patterning the photoresist layer (), so that the photoresist layer () comprises at least one first via (). The patterned mask () comprises a second surface () facing away from the first surface (). The first via () is filled with a first bump () by depositing the first bump () on the first surface (). A conductive structure () is formed on the second surface () of the patterned mask (). The conductive structure () is electrically connected to the first bump ().


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