The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Jun. 28, 2012
Bruce Scatchard, Anmore, CA;
Chunfang Xie, Coquitlam, CA;
Scott Barrick, Surrey, CA;
Kenneth D. Wagner, West Vancouver, CA;
Bruce Scatchard, Anmore, CA;
Chunfang Xie, Coquitlam, CA;
Scott Barrick, Surrey, CA;
Kenneth D. Wagner, West Vancouver, CA;
PMC-Sierra US, Inc., Sunnyvale, CA (US);
Abstract
A method of reducing current leakage in unused circuits performed during semiconductor fabrication and a semiconductor device or integrated circuit thereby formed. The method involves modifying a characteristic of at least one idle circuit that is unused in a product variant, to inhibit the circuit and reduce current leakage therefrom upon powering as well as during operation. The method can substantially increase the V(threshold voltage) of all transistors of a given type, such as all N-type transistors or all P-type transistors. The method is also suitable for controlling other transistor parameters, such as transistor channel length, as well as other active elements, such as N-type resistors or P-type resistors, in unused circuits which affect leakage current as well as for other unused circuits, such as a high Vcircuit, a standard Vcircuit, a low Vcircuit, and an SRAM cell Vcircuit.