The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Aug. 12, 2011
Applicants:
Radhika Marathe, Cambridge, MA (US);
Dana Weinstein, Cambridge, MA (US);
Inventors:
Radhika Marathe, Cambridge, MA (US);
Dana Weinstein, Cambridge, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/08 (2006.01); H01L 41/113 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H01L 41/09 (2006.01); H01L 29/84 (2006.01);
U.S. Cl.
CPC ...
H01L 41/0986 (2013.01); H01L 41/1132 (2013.01); H01L 29/518 (2013.01); H01L 29/517 (2013.01); H01L 29/7842 (2013.01); H01L 29/84 (2013.01);
Abstract
An piezoelectric electromechanical transistor has first and second terminals formed in a semiconductor region, a gate and a piezoelectric region between the gate and the semiconductor region. The piezoelectric region may be configured to drive the semiconductor region to vibrate in response to a signal applied to the gate. The transistor may be configured to produce a signal at the first terminal at least partially based on vibration of the semiconductor region.