The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Feb. 08, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Sin-Woo Kang, Suwon-si, KR;
Jang-Ho Kim, Incheon, KR;
Woon-Seob Lee, Suwon-si, KR;
Jong-Hoon Cho, Seoul, KR;
Sung-Dong Cho, Hwaseong-si, KR;
Yeong-Lyeol Park, Yongin-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 23/48 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/14181 (2013.01); H01L 21/76877 (2013.01);
Abstract
A semiconductor device having a via structure in a stress relief layer is provided. The semiconductor device may include an isolation layer on the circuit region, a stress relief layer on the via region, and a via structure in the stress relief layer and the substrate. The stress relief layer may have a thickness larger than that of the isolation layer and a stepped cross section.