The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Jun. 17, 2013
Kabushiki Kaisha Toshiba, Tokyo, JP;
Yoshiyuki Kondo, Yokohama, JP;
Akira Hokazono, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In one embodiment, a semiconductor device includes a first diffusion layer of a first conductivity type and a second diffusion layer of a second conductivity type that are provided in a semiconductor layer at a distance, the second conductivity type being an opposite conductivity type of the first conductivity type, a first insulating film and a second insulating film that are provided on the semiconductor layer between the first diffusion layer and the second diffusion layer at a distance, a gate electrode provided on the first insulating film, and a threshold regulating electrode provided on the second insulating film.