The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Dec. 29, 2010
Kenji Miyakoshi, Ome, JP;
Shinichiro Wada, Fuchu, JP;
Yohei Yanagida, Hamura, JP;
Takayuki Oshima, Ome, JP;
Keigo Kitazawa, Hino, JP;
Kenji Miyakoshi, Ome, JP;
Shinichiro Wada, Fuchu, JP;
Yohei Yanagida, Hamura, JP;
Takayuki Oshima, Ome, JP;
Keigo Kitazawa, Hino, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In an LDMOS transistor, a channel length is reduced to increase a saturation current without causing an off-state breakdown voltage optimized in terms of trade-off between an on-resistance and the off-state breakdown voltage. A short channel region is selectively formed between an element isolation film and a low-concentration body region in which a channel is formed such that the short channel region is located immediately below a gate oxide film. The short channel region has a conduction type opposite to that of the low-concentration body region and has a carrier concentration higher than that of the low-concentration body region. The body region is retreated by the presence of the short channel region toward a high-concentration source region.