The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
May. 07, 2013
Industrial Technology Research Institute, Hsinchu, TW;
Cheng-Tyng Yen, Kaohsiung, TW;
Chien-Chung Hung, Hsinchu, TW;
Young-Shying Chen, Hsinchu, TW;
Chwan-Ying Lee, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A step trench metal-oxide-semiconductor field-effect transistor comprises a drift layer, a first semiconductor region, a stepped gate and a floating region. The drift layer is of a first conductivity type. The first semiconductor region is of a second conductivity type and located on the drift layer, wherein the drift layer and the first semiconductor region have a stepped gate trench therein. The stepped gate trench at least comprises a first recess located in the first semiconductor region and extending into the drift layer and a second recess located below a bottom of the first recess, wherein a width of the second recess is smaller than a width of the first recess. A floating region is of the second conductivity type and located in the drift layer below the second recess.