The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Mar. 28, 2013
California Institute of Technology, Pasadena, CA (US);
Aditya Rajagopal, Irvine, CA (US);
Axel Scherer, Barnard, VT (US);
Michael D. Henry, Altadena, CA (US);
Sameer Walavalkar, Studio City, CA (US);
Thomas A. Tombrello, Altadena, CA (US);
Andrew P. Homyk, South Pasadena, CA (US);
California Institute of Technology, Pasadena, CA (US);
Abstract
A field effect nano-pillar transistor has a pillar shaped gate element incorporating a biomimitec portion that provides various advantages over prior art devices. The small size of the nano-pillar transistor allows for advantageous insertion into cellular membranes, and the biomimitec character of the gate element operates as an advantageous interface for sensing small amplitude voltages such as transmembrane cell potentials. The nano-pillar transistor can be used in various embodiments to stimulate cells, to measure cell response, or to perform a combination of both actions.