The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Jan. 09, 2013
Panasonic Corporation, Osaka, JP;
Panasonic Liquid Crystal Display Co., Ltd., Hyogo, JP;
Arinobu Kanegae, Osaka, JP;
Takahiro Kawashima, Osaka, JP;
Hiroshi Hayashi, Kyoto, JP;
Genshirou Kawachi, Chiba, JP;
Panasonic Corporation, Osaka, JP;
Panasonic Liquid Crystal Display Co., Ltd., Hyogo, JP;
Abstract
A thin-film transistor device includes: a gate electrode above a substrate; a gate insulating film on the gate electrode; a crystalline silicon thin film including a channel region which is provided on the gate insulating film; semiconductor films on at least the channel region; an insulating film made of an organic material which is provided over the channel region and above the semiconductor films; a source electrode over at least an end portion of the insulating film; and a drain electrode over at least the other end portion of the insulating film and facing the source electrode. The semiconductor films include at least a first semiconductor film and a second semiconductor film provided on the first semiconductor film. A relationship E<Eis satisfied where Eand Edenote energy levels at lower ends of conduction bands of the crystalline silicon thin film and the first semiconductor film, respectively.