The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Jan. 16, 2013
Panasonic Corporation, Osaka, JP;
Arinobu Kanegae, Osaka, JP;
Takahiro Kawashima, Osaka, JP;
Hiroshi Hayashi, Kyoto, JP;
Genshirou Kawachi, Chiba, JP;
Panasonic Corporation, Osaka, JP;
Panasonic Liquid Crystal Display Co., Ltd., Hyogo, JP;
Abstract
A thin-film transistor device includes: a gate electrode above a substrate; a gate insulating film on the gate electrode; a crystalline silicon thin film above the gate insulating film; a first semiconductor film above the crystalline silicon thin film; a pair of second semiconductor films above the first semiconductor film; a source electrode over one of the second semiconductor films; and a drain electrode over an other one of the second semiconductor films. The first semiconductor film is provided on the crystalline silicon thin film. A relationship E<Eis satisfied where Eand Edenote energy levels at lower ends of conduction bands of the crystalline silicon thin film and the first semiconductor film, respectively.