The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Aug. 03, 2012
Jyu-yu Chang, Taichung, TW;
Chun-wei Lai, Taichung, TW;
Po-yuan Shen, Taichung, TW;
Wen-jung Lee, New Taipei, TW;
Chih-wei Tai, Taoyuan County, TW;
Jyu-Yu Chang, Taichung, TW;
Chun-Wei Lai, Taichung, TW;
Po-Yuan Shen, Taichung, TW;
Wen-Jung Lee, New Taipei, TW;
Chih-Wei Tai, Taoyuan County, TW;
Au Optronics Corporation, Hsinchu, TW;
Abstract
A transistor structure disposed on a substrate includes a gate electrode, a gate insulating layer overlapping the gate electrode, a channel layer overlapping the gate electrode, and a plurality of first electrodes and a plurality of second electrodes overlapping the gate electrode. The gate insulating layer is disposed between the channel layer and the gate electrode. Besides, the gate insulating layer is located among the first electrodes, the second electrodes, and the gate electrode. The first electrodes and the second electrodes are alternately arranged along a first direction. Each of the first electrodes has a first width along the first direction. Each of the second electrodes has a second width along the first direction. A ratio of the first width to the second width ranges from 2 to 20. A driving circuit structure having the transistor structure is also provided.