The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Feb. 24, 2012
Hitomi Sato, Isehara, JP;
Takayuki Saito, Atsugi, JP;
Kosei Noda, Atsugi, JP;
Toru Takayama, Atsugi, JP;
Hitomi Sato, Isehara, JP;
Takayuki Saito, Atsugi, JP;
Kosei Noda, Atsugi, JP;
Toru Takayama, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
Provided is a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which a semiconductor film whose threshold voltage is difficult to control is used as an active layer. By using a silicon oxide film having a negative fixed charge as a film in contact with the active layer of the transistor or a film in the vicinity of the active layer, a negative electric field is always applied to the active layer due to the negative fixed charge and the threshold voltage of the transistor can be shifted in the positive direction. Thus, the highly reliable semiconductor device can be manufactured by giving stable electric characteristics to the transistor.