The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Apr. 05, 2011
Je-hun Lee, Seoul, KR;
Jae-woo Park, Seongnam-si, KR;
Byung-du Ahn, Goyang-si, KR;
Sei-yong Park, Suwon-si, KR;
Jun-hyun Park, Hongcheon-gun, KR;
Je-Hun Lee, Seoul, KR;
Jae-Woo Park, Seongnam-si, KR;
Byung-Du Ahn, Goyang-si, KR;
Sei-Yong Park, Suwon-si, KR;
Jun-Hyun Park, Hongcheon-gun, KR;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
A thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a gate insulation layer and an oxide semiconductor pattern. The source and drain electrodes include a first metal element with a first oxide formation free energy. The oxide semiconductor pattern has a first surface making contact with the gate insulation layer and a second surface making contact with the source and drain electrodes to be positioned at an opposite side of the first surface. The oxide semiconductor pattern includes an added element having a second oxide formation free energy having an absolute value greater than or equal to an absolute value of the first oxide formation free energy, wherein an amount of the added element included in a portion near the first surface is zero or smaller than an amount of the added element included in a portion near the second surface.