The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Sep. 03, 2013
Kabushiki Kaisha Toshiba, Tokyo, JP;
Tomomi Kuraguchi, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor device manufacturing method includes: forming a film to be a first metal layer on a substrate where an element portion is formed; forming a first insulating layer provided with an opening on the film to be the first metal layer; forming a second metal layer in the opening of the first insulating layer; eliminating the first insulating layer; eliminating the film to be the first metal layer with the second metal layer used as a mask so as to form the first metal layer; and forming an electrode portion by covering exposed surfaces of the first metal layer and the second metal layer with a third metal layer including a metal of a smaller ionization tendency than the metal of the second metal layer.