The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Aug. 17, 2011
Byoung-keon Park, Yongin, KR;
Jong-ryuk Park, Yongin, KR;
Yun-mo Chung, Yongin, KR;
Tak-young Lee, Yongin, KR;
Jin-wook Seo, Yongin, KR;
Ki-yong Lee, Yongin, KR;
Min-jae Jeong, Yongin, KR;
Yong-duck Son, Yongin, KR;
Byung-soo SO, Yongin, KR;
Seung-kyu Park, Yongin, KR;
Dong-hyun Lee, Yongin, KR;
Kil-won Lee, Yongin, KR;
Jae-wan Jung, Yongin, KR;
Byoung-Keon Park, Yongin, KR;
Jong-Ryuk Park, Yongin, KR;
Yun-Mo Chung, Yongin, KR;
Tak-Young Lee, Yongin, KR;
Jin-Wook Seo, Yongin, KR;
Ki-Yong Lee, Yongin, KR;
Min-Jae Jeong, Yongin, KR;
Yong-Duck Son, Yongin, KR;
Byung-Soo So, Yongin, KR;
Seung-Kyu Park, Yongin, KR;
Dong-Hyun Lee, Yongin, KR;
Kil-Won Lee, Yongin, KR;
Jae-Wan Jung, Yongin, KR;
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Abstract
A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.