The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Sep. 07, 2012
Jun-hyeub Sun, Gyeonggi-do, KR;
Sang-oh Lee, Gyeonggi-do, KR;
Su-young Kim, Gyeonggi-do, KR;
SK Hynix Inc., Gyeonggi-do, KR;
Abstract
A method for fabricating a semiconductor device includes forming a first dielectric structure over a second region of a substrate to expose a first region of the substrate, forming a barrier layer over an entire surface including the first dielectric structure, forming a second dielectric structure over the barrier layer in the first region, forming first open parts and second open parts in the first region and the second region, respectively, by etching the second dielectric structure, the barrier layer and the first dielectric structure, forming first conductive patterns filled in the first open parts and second conductive patterns filled in the second open parts, forming a protective layer to cover the second region, and removing the second dielectric structure.