The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Mar. 04, 2010
Alexander Hoelke, Sarawak, MY;
Deb Kumar Pal, Sarawak, MY;
Kia Yaw Kee, Sarawak, MY;
Yang Hao, Sarawak, MY;
Alexander Hoelke, Sarawak, MY;
Deb Kumar Pal, Sarawak, MY;
Kia Yaw Kee, Sarawak, MY;
Yang Hao, Sarawak, MY;
X-Fab Semiconductor Foundries AG, Erfurt, DE;
Abstract
The disclosed method of manufacturing () a semiconductor device () has the steps () of: forming at least one wall () of a body () of the semiconductor device () by etching at least one trench () for a gate () of the semiconductor device () into the body (); and performing a slanted implantation doping () into the at least one wall () of the body (), after the etching () of the at least one trench () and prior to coating the at least one trench () with an insulating layer (). A semiconductor device () comprises at least one trench () for a gate () of the semiconductor device (); and a body () having at least one wall () of the at least one trench (), wherein a deviation () of a doping concentration () along a distance () in depth-direction (do) of the at least one trench () in a surface () of the at least one wall () is less than ten percent of a maximum value () of the doping concentration () along the distance ().