The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Mar. 10, 2011
Applicant:
Yoshio Ozawa, Kanagawa-ken, JP;
Inventor:
Yoshio Ozawa, Kanagawa-ken, JP;
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/336 (2006.01); H01L 21/3205 (2006.01); H01L 29/423 (2006.01); H01L 29/792 (2006.01); H01L 21/28 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 29/4234 (2013.01); H01L 21/28282 (2013.01); H01L 29/0657 (2013.01); H01L 29/66833 (2013.01); H01L 29/7926 (2013.01); H01L 27/11582 (2013.01);
Abstract
On a silicon substrate is formed a stacked body by alternately stacking a plurality of silicon oxide films and silicon films, a trench is formed in the stacked body, an alumina film, a silicon nitride film and a silicon oxide film are formed in this order on an inner surface of the trench, and a channel silicon crystalline film is formed on the silicon oxide film. Next, a silicon oxide layer is formed at an interface between the silicon oxide film and the channel silicon crystalline film by performing thermal treatment in an oxygen gas atmosphere.