The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Oct. 21, 2011
Vitaliy Fadeyev, Santa Cruz, CA (US);
Hartmut F. W. Sadrozinski, Palo Alto, CA (US);
Marc Christophersen, Berwyn Heights, MD (US);
Bernard F. Phlips, Great Falls, VA (US);
Vitaliy Fadeyev, Santa Cruz, CA (US);
Hartmut F. W. Sadrozinski, Palo Alto, CA (US);
Marc Christophersen, Berwyn Heights, MD (US);
Bernard F. Phlips, Great Falls, VA (US);
The Regents of the University of California, Oakland, CA (US);
Naval Research Laboratory, Washington, DC (US);
Abstract
A method of singulating semiconductor devices in the close proximity to active structures by controlling interface charge of semiconductor device sidewalls is provided that includes forming a scribe on a surface of a semiconductor devices, where the scribe is within 5 degrees of a crystal lattice direction of the semiconductor device, cleaving the semiconductor device along the scribe, where the devices are separated, using a coating process to coat the sidewalls of the cleaved semiconductor device with a passivation material, where the passivation material is disposed to provide a fixed charge density at a semiconductor interface of the sidewalls, and where the fixed charge density interacts with charge carriers in the bulk of the material.