The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2014

Filed:

Feb. 25, 2009
Applicants:

Britta Goeoetz, Regensburg, DE;

Thomas Dobbertin, Regensburg, DE;

Karsten Diekmann, Rattenberg, DE;

Andreas Kanitz, Hoechstadt, DE;

Guenter Schmid, Hemhofen, DE;

Arvid Hunze, Erlangen, DE;

Inventors:

Britta Goeoetz, Regensburg, DE;

Thomas Dobbertin, Regensburg, DE;

Karsten Diekmann, Rattenberg, DE;

Andreas Kanitz, Hoechstadt, DE;

Guenter Schmid, Hemhofen, DE;

Arvid Hunze, Erlangen, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/50 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5052 (2013.01); H01L 51/002 (2013.01); H01L 51/0083 (2013.01); H01L 51/0071 (2013.01); H01L 51/0084 (2013.01); H01L 51/0072 (2013.01); H01L 51/001 (2013.01);
Abstract

A process is provided for producing a doped organic semiconductive layer, comprising the process steps of A) providing a matrix material, B) providing a dopant complex, and C) simultaneously applying the matrix material and the dopant complex to a substrate by vapor deposition, wherein, in process step C), the dopant complex is decomposed and the pure dopant is intercalated into the matrix material.


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