The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2014

Filed:

Mar. 18, 2013
Applicant:

Kimitaka Shibata, Tokyo, JP;

Inventor:

Kimitaka Shibata, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01S 5/026 (2006.01); H01S 5/22 (2006.01); H01S 5/20 (2006.01); H01S 5/00 (2006.01); H01S 5/12 (2006.01);
U.S. Cl.
CPC ...
H01S 5/026 (2013.01); H01S 5/2086 (2013.01); H01S 5/22 (2013.01); H01S 5/0265 (2013.01); H01S 5/0042 (2013.01); H01S 5/12 (2013.01);
Abstract

A method for manufacturing an optical modulator having a laser diode section and an EAM section. LD growth layers which are semiconductor layers for manufacturing the laser diode section, are formed on a semiconductor substrate. An EAM absorption layer for forming the EAM section is then formed on the semiconductor substrate. The photoluminescent wavelength of the EAM absorption layer is then measured. The LD growth layers are then etched to form a stripe structure section. The width of the stripe structure section is determined such that the difference between the lasing wavelength of the LD section and the photoluminescent wavelength of the EAM section is close to a design value.


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