The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Jan. 24, 2012
Ashok Lahiri, Cupertino, CA (US);
Robert Spotnitz, Pleasanton, CA (US);
Nirav Shah, Pleasanton, CA (US);
Murali Ramasubramanian, Fremont, CA (US);
Harrold J. Rust, Iii, Alamo, CA (US);
James D. Wilcox, Pleasanton, CA (US);
Michael J. Armstrong, Danville, CA (US);
Brian E. Brusca, Tracy, CA (US);
Christopher G. Castledine, Sunnyvale, CA (US);
Laurie J. Lauchlan, Saratoga, CA (US);
Ashok Lahiri, Cupertino, CA (US);
Robert Spotnitz, Pleasanton, CA (US);
Nirav Shah, Pleasanton, CA (US);
Murali Ramasubramanian, Fremont, CA (US);
Harrold J. Rust, III, Alamo, CA (US);
James D. Wilcox, Pleasanton, CA (US);
Michael J. Armstrong, Danville, CA (US);
Brian E. Brusca, Tracy, CA (US);
Christopher G. Castledine, Sunnyvale, CA (US);
Laurie J. Lauchlan, Saratoga, CA (US);
Enovix Corporation, Fremont, CA (US);
Abstract
A structure for use in an energy storage device, the structure comprising a backbone system extending generally perpendicularly from a reference plane, and a population of microstructured anodically active material layers supported by the lateral surfaces of the backbones, each of the microstructured anodically active material layers having a void volume fraction of at least 0.1 and a thickness of at least 1 micrometer.