The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2014
Filed:
Jun. 12, 2012
Wenzhuo Guo, Cupertino, CA (US);
Fabio Zürcher, Brisbane, CA (US);
Joerg Rockenberger, Redwood City, CA (US);
Klaus Kunze, Albuquerque, NM (US);
Vladimir K. Dioumaev, Mountain View, CA (US);
Brent Ridley, San Carlos, CA (US);
James Montague Cleeves, Redwood City, CA (US);
Wenzhuo Guo, Cupertino, CA (US);
Fabio Zürcher, Brisbane, CA (US);
Joerg Rockenberger, Redwood City, CA (US);
Klaus Kunze, Albuquerque, NM (US);
Vladimir K. Dioumaev, Mountain View, CA (US);
Brent Ridley, San Carlos, CA (US);
James Montague Cleeves, Redwood City, CA (US);
Thin Film Electronics ASA, Oslo, NO;
Abstract
Heterocyclosilane compounds and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous silicon film (that may also be hydrogenated to some extent) or doped polycrystalline semiconductor film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a 'doped liquid silicon' composition.