The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Jun. 14, 2011
Yuichiro Yamashita, Ebina, JP;
Yasuo Yamazaki, Sagamihara, JP;
Masaru Fujimura, Yokohama, JP;
Shin Kikuchi, Isehara, JP;
Shoji Kono, Hachioji, JP;
Shinichiro Shimizu, Yokohama, JP;
Yu Arishima, Yokohama, JP;
Yuichiro Yamashita, Ebina, JP;
Yasuo Yamazaki, Sagamihara, JP;
Masaru Fujimura, Yokohama, JP;
Shin Kikuchi, Isehara, JP;
Shoji Kono, Hachioji, JP;
Shinichiro Shimizu, Yokohama, JP;
Yu Arishima, Yokohama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A solid-state imaging apparatus has a pixel array in which a plurality of pixels are arranged to form a plurality of rows and a plurality of columns, and a plurality of column signal lines are arranged, wherein each of the plurality of pixels includes a photoelectric converter including a first well formed in a semiconductor substrate and having a first conductivity type, and an impurity region arranged in the first well and having a second conductivity type different from the first conductivity type, and an in-pixel readout circuit which outputs, to the column signal line, a signal corresponding to charges generated in the photoelectric converter, the in-pixel readout circuit including a circuit element arranged in a second well having the first conductivity type, and wherein the first well and the second well are isolated by a semiconductor region having the second conductivity type.