The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8836131 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 16, 2014

Filed:

Nov. 19, 2009
Applicants:

Peter Kanschat, Soest, DE;

Indrajit Paul, Soest, DE;

Inventors:

Peter Kanschat, Soest, DE;

Indrajit Paul, Soest, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 29/786 (2006.01); H01L 31/102 (2006.01); H01L 29/66 (2006.01); H01L 23/544 (2006.01); H01L 23/52 (2006.01); H01L 23/48 (2006.01); H01L 29/40 (2006.01); H01L 23/00 (2006.01); H01L 23/538 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3121 (2013.01); H01L 24/82 (2013.01); H01L 23/5389 (2013.01); H01L 2924/01078 (2013.01); H01L 2224/24226 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01033 (2013.01); H01L 24/24 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/30107 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/01082 (2013.01); H01L 2224/24051 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01068 (2013.01); H01L 2924/3011 (2013.01);
Abstract

A semiconductor module is disclosed, including a substrate and at least one semiconductor component in bottom contact with the substrate. The semiconductor component including a main current branch sandwiched between the bottom and top of the semiconductor component. The side edges of a barrier layer zone coincide with the side edge portions of the semiconductor component between the top and the bottom. The space above the substrate and to the side of the semiconductor component is packed with an insulating compound at least up to the level of the top of the semiconductor component. Topping the semiconductor component and parallel thereto is a patterned or unpatterned metallization connected to a contact pad on the top of the semiconductor component.


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