The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2014

Filed:

Feb. 16, 2011
Applicants:

Daisuke Hiraiwa, Ichihara, JP;

Takehiko Okabe, Ichihara, JP;

Inventors:

Daisuke Hiraiwa, Ichihara, JP;

Takehiko Okabe, Ichihara, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/16 (2010.01); H01L 33/00 (2010.01); B23K 26/40 (2014.01); B23K 26/00 (2014.01); H01S 5/02 (2006.01); H01L 33/20 (2010.01); H01L 33/32 (2010.01); H01S 5/32 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0202 (2013.01); H01L 33/16 (2013.01); H01L 33/0095 (2013.01); B23K 26/4075 (2013.01); H01S 5/0213 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); B23K 26/0057 (2013.01); B23K 2201/40 (2013.01); H01S 5/3202 (2013.01);
Abstract

Disclosed is a semiconductor light emitting chip () that is composed of: a substrate (), which has the C plane of a sapphire single crystal as the front surface, and the side surfaces () configured of planes that intersect all the planes equivalent to the M plane of the sapphire single crystal, and which includes modified regions () in the side surfaces (), the modified regions being formed by laser radiation; and a light emitting element (), which is provided on the substrate front surface () of the substrate (). In the semiconductor light emitting chip, a tilt of the substrate side surfaces with respect to the substrate front surface is suppressed. Also disclosed is a method for processing the substrate.


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