The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2014

Filed:

Mar. 14, 2012
Applicant:

Kyoichi Suguro, Yokohama, JP;

Inventor:

Kyoichi Suguro, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/8238 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76254 (2013.01);
Abstract

According to one embodiment, a fabrication method for a semiconductor device includes: injecting an ion into a first substrate; joining the first substrate and a second substrate; irradiating a microwave to agglomerate the ion in a planar state in a desired position in the first substrate and form an agglomeration region spreading in a planar state; separating the second substrate provided with a part of the first substrate from the rest of the first substrate by exfoliating the joined first substrate from the second substrate in the agglomeration region; and grinding a part of the second substrate on a back surface opposite to an exfoliated surface in the second substrate provided with a part of the first substrate.


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