The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Apr. 22, 2010
Applicants:
Karim S. Karim, Waterloo, CA;
Kai Wang, Waterloo, CA;
Amirhossein Goldan, Vancouver, CA;
Inventors:
Assignee:
Other;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0272 (2006.01); H01L 31/115 (2006.01); H01L 31/0224 (2006.01); H01L 31/107 (2006.01); H01L 31/108 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022408 (2013.01); H01L 31/0272 (2013.01); H01L 31/107 (2013.01); H01L 31/115 (2013.01); H01L 31/1085 (2013.01);
Abstract
A lateral Metal-Semiconductor-Metal (MSM) Photodetector (PD) is based on amorphous selenium (a-Se). It has low dark current, high photoconductive gain towards short wavelengths, and high speed of operation up to several KHz. From processing point of view, a lateral structure is more attractive due to ease of fabrication as well as compatibility with conventional thin-film transistor (TFT) processes. The lateral a-Se MSM PD therefore has potentials in a variety of optical sensing applications particularly in indirect X-ray imaging utilizing scintillators and ultraviolet (UV) imaging for life sciences.