The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Apr. 27, 2011
Joseph A. Yedinak, Mountain Top, PA (US);
Mark L. Rinehimer, Mountain Top, PA (US);
Praveen Muraleedharan Shenoy, Kochi, IN;
Jaegil Lee, Incheon-si, KR;
Dwayne S. Reichl, Pocono Lake, PA (US);
Harold Heidenreich, Drums, PA (US);
Joseph A. Yedinak, Mountain Top, PA (US);
Mark L. Rinehimer, Mountain Top, PA (US);
Praveen Muraleedharan Shenoy, Kochi, IN;
Jaegil Lee, Incheon-si, KR;
Dwayne S. Reichl, Pocono Lake, PA (US);
Harold Heidenreich, Drums, PA (US);
Fairchild Semiconductor Corporation, San Jose, CA (US);
Abstract
In a general aspect, a power device can include at least one N-type epitaxial layer disposed on a substrate and a plurality of N-pillars and P-pillars that define alternating P-N-pillars in the at least one N-type epitaxial layer. The power device can also include an active region and a termination region, where the termination region surrounds the active region. The alternating P-N-pillars can be disposed in both the active region and the termination region, where the termination region can include a predetermined number of floating P-pillars.