The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2014

Filed:

Feb. 11, 2013
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Mariko Shimizu, Tokyo, JP;

Jun Morioka, Kanagawa-ken, JP;

Keita Takahashi, Kanagawa-ken, JP;

Kanako Komatsu, Kanagawa-ken, JP;

Masahito Nishigoori, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01);
Abstract

According to one embodiment, a first distance is a distance between both ends of the first insulating film in a direction connecting the fourth semiconductor layer and the sixth semiconductor layer. The first distance in the first region is longer than the first distance in the second region. A second distance is a distance between an edge of the second insulating film on an inner peripheral side of the second semiconductor layer and an edge of the third semiconductor layer on an outer peripheral side of the second semiconductor layer. The second distance in the first region is shorter than the second distance in the second region.


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