The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Oct. 04, 2012
Applicant:
Spansion Llc, Sunnyvale, CA (US);
Inventor:
Angela T. Hui, Fremont, CA (US);
Assignee:
Spansion LLC, Sunnyvale, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract
Charge-trapping field effect transistors may be formed into an array on a wafer suitable to be a NAND memory device. A thick oxide layer is applied over the gates to ensure that the gap between the gates is filled. The filled gap substantially prevents nitride from being trapped, which could otherwise decrease the yield of the devices. This technique, and its variations, are useful for a range of semiconductor devices.