The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2014

Filed:

Jul. 27, 2010
Applicant:

James Robert Janesick, Huntington Beach, CA (US);

Inventor:

James Robert Janesick, Huntington Beach, CA (US);

Assignee:

SRI International, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2012.01); H01L 27/146 (2006.01); H01L 31/109 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 27/14658 (2013.01); H01L 31/109 (2013.01); H01L 27/14689 (2013.01); H01L 27/14609 (2013.01);
Abstract

A CMOS pixel is disclosed. The CMOS pixel includes a semiconductor substrate; a sense node formed in the semiconductor substrate and positioned substantially in the center of the CMOS pixel; a transfer gate formed about the sense node; and at least one photodiode formed about the transfer gate. A reset transistor, a source follower transistor, and a row select transistor are located substantially to one side of the CMOS pixel substantially adjacent to the photodiode. The sense node is operable to be floating. An implant may be formed about the photodiode configured to step potential in a direction toward the sense node.


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