The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Jun. 08, 2011
Sungkwan Kang, Seoul, KR;
Keum Seok Park, Gwangmyeong-si, KR;
Byeongchan Lee, Yongin-si, KR;
Sangbom Kang, Seoul, KR;
Nam-kyu Kim, Yongin-si, KR;
Sungkwan Kang, Seoul, KR;
Keum Seok Park, Gwangmyeong-si, KR;
Byeongchan Lee, Yongin-si, KR;
Sangbom Kang, Seoul, KR;
Nam-Kyu Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device includes a semiconductor substrate, a gate electrode structure including a gate electrode located on an active region of the semiconductor substrate, first and second epitaxial regions located in the active region at opposite sides of the gate electrode structure, and first and second silicide layers on upper surfaces of the first and second epitaxial regions, respectively. The first and second epitaxial regions include Si—X, where X is one of germanium and carbon, and at least a portion of each of the first and second silicide layers is devoid of X and includes Si—Y, where Y is a metal or metal alloy.