The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Dec. 02, 2011
Applicants:
Masahiko Hata, Ibaraki, JP;
Taro Itatani, Ibaraki, JP;
Inventors:
Masahiko Hata, Ibaraki, JP;
Taro Itatani, Ibaraki, JP;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0264 (2006.01); H01L 31/0392 (2006.01); H01L 31/052 (2014.01); H01L 31/18 (2006.01); H01L 31/076 (2012.01); H01L 27/142 (2014.01);
U.S. Cl.
CPC ...
H01L 31/0522 (2013.01); Y02E 10/544 (2013.01); Y02E 10/52 (2013.01); H01L 31/0392 (2013.01); H01L 31/1852 (2013.01); H01L 31/076 (2013.01); Y02E 10/548 (2013.01); H01L 27/142 (2013.01);
Abstract
Provided is a semiconductor wafer including: a base wafer containing silicon; an inhibitor that has been formed on the base wafer, has an aperture in which a surface of the base wafer is exposed, and inhibits crystal growth; and a light-absorptive structure that has been formed inside the aperture in contact with a surface of the base wafer exposed inside the aperture, where the light-absorptive structure includes a first semiconductor and a second semiconductor.