The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Mar. 14, 2012
Avinash Srikrishnan Kashyap, Clifton Park, NY (US);
Emad Andarawis Andarawis, Ballston Lake, NY (US);
David Mulford Shaddock, Niskayuna, NY (US);
Avinash Srikrishnan Kashyap, Clifton Park, NY (US);
Emad Andarawis Andarawis, Ballston Lake, NY (US);
David Mulford Shaddock, Niskayuna, NY (US);
General Electric Company, Niskayuna, NY (US);
Abstract
A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The transient voltage suppressor (TVS) assembly includes a semiconductor die including a contact surface on a single side of the die, the die further including a substrate comprising a layer of at least one of an electrical insulator material, a semi-insulating material, and a first wide band gap semiconductor having a conductivity of a first polarity, at least a TVS device including a plurality of wide band gap semiconductor layers formed on the substrate; a first electrode coupled in electrical contact with the TVS device and extending to the contact surface, and a second electrode electrically coupled to the substrate extending to the contact surface.