The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2014

Filed:

Jan. 18, 2013
Applicant:

The Penn State Research Foundation, University Park, PA (US);

Inventors:

Fan Zhang, State College, PA (US);

Jian Xu, State College, PA (US);

Suzanne Mohney, State College, PA (US);

Assignee:

The Penn State Research Foundation, University Park, PA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/00 (2006.01); H01L 33/04 (2010.01); H01L 33/20 (2010.01); H01L 33/50 (2010.01); H01L 33/06 (2010.01); B82Y 99/00 (2011.01); B82Y 10/00 (2011.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/04 (2013.01); H01L 33/06 (2013.01); B82Y 99/00 (2013.01); B82Y 10/00 (2013.01); H01L 33/20 (2013.01); H01L 33/502 (2013.01); B82Y 20/00 (2013.01);
Abstract

A quantum well-based p-i-n light emitting diode is provided that includes nanopillars with an average linear dimension of between 50 nanometers and 1 micron. The nanopillars include a laminar layer of quantum wells capable of non-radiative energy transfer to quantum dot nanocrystals. Quantum dot-Quantum well coupling through the side walls of the nanopillar-configured LED structure achieves a close proximity between quantum wells and quantum dots while retaining the overlying contact electrode structures. A white LED with attractive properties relative to conventional incandescent and fluorescence lighting devices is produced.


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