The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Mar. 28, 2012
Chien-chung Hung, Hsinchu County, TW;
Young-shying Chen, Hsinchu, TW;
Cheng-tyng Yen, Kaohsiung, KR;
Chwan-ying Lee, Hsinchu, TW;
Chien-Chung Hung, Hsinchu County, TW;
Young-Shying Chen, Hsinchu, TW;
Cheng-Tyng Yen, Kaohsiung, KR;
Chwan-Ying Lee, Hsinchu, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A trench metal oxide semiconductor transistor device and a manufacturing method thereof are described. The trench metal oxide semiconductor transistor device includes a substrate of a first conductivity type, a drift region of the first conductivity type, a deep trench doped region of a second conductivity type, an epitaxial region of the second conductivity type, a trench gate, a gate insulating layer, a source region, a drain electrode and a source electrode. The drift region has at least one deep trench therein, and the deep trench doped region is disposed in the deep trench. The trench gate passes through the epitaxial region, and a distance between a bottom of the trench gate and a bottom of the deep trench doped region is 0.5˜3 μm.